Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Series
IRFR5305PBF
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
7.49mm
Number of Elements per Chip
1
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,551
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,683
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,551
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,683
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Series
IRFR5305PBF
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
7.49mm
Number of Elements per Chip
1
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V