Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
205 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.39mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
6.22mm
Alkuperämaa
Mexico
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,902
1 kpl (75 kpl/putki) (ilman ALV)
€ 1,118
1 kpl (75 kpl/putki) (Sis ALV:n)
75
€ 0,902
1 kpl (75 kpl/putki) (ilman ALV)
€ 1,118
1 kpl (75 kpl/putki) (Sis ALV:n)
75
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
75 - 75 | € 0,902 | € 67,65 |
150 - 300 | € 0,856 | € 64,20 |
375+ | € 0,771 | € 57,82 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
205 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.39mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
6.22mm
Alkuperämaa
Mexico