N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
60 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
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€ 77.00
€ 77.00 1 Tube of 50 (Exc. Vat)
€ 96.64
€ 96.64 1 Tube of 50 (inc. VAT)
1
€ 77.00
€ 77.00 1 Tube of 50 (Exc. Vat)
€ 96.64
€ 96.64 1 Tube of 50 (inc. VAT)
1
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Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 1 | € 77.00 |
| 2 - 3 | € 63.50 |
| 4 - 7 | € 61.00 |
| 8 - 14 | € 58.50 |
| 15+ | € 53.50 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
60 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products