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Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
185 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 5 V
Height
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,972
1 kpl (75 kpl/putki) (ilman ALV)
€ 1,205
1 kpl (75 kpl/putki) (Sis ALV:n)
75
€ 0,972
1 kpl (75 kpl/putki) (ilman ALV)
€ 1,205
1 kpl (75 kpl/putki) (Sis ALV:n)
75
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
185 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 5 V
Height
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C