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IXYSMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y4 M5
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Single
Dimensions
94 x 34 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 61,50
kpl (ilman ALV)
€ 76,26
kpl (Sis ALV:n)
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€ 61,50
kpl (ilman ALV)
€ 76,26
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 4 | € 61,50 |
5 - 9 | € 54,50 |
10 - 24 | € 53,00 |
25+ | € 51,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y4 M5
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Single
Dimensions
94 x 34 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.