Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Alkuperämaa
Korea, Republic Of
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,65
1 kpl (5 kpl/putki) (ilman ALV)
€ 2,046
1 kpl (5 kpl/putki) (Sis ALV:n)
5
€ 1,65
1 kpl (5 kpl/putki) (ilman ALV)
€ 2,046
1 kpl (5 kpl/putki) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
5 - 20 | € 1,65 | € 8,25 |
25 - 45 | € 1,45 | € 7,25 |
50 - 145 | € 1,25 | € 6,25 |
150 - 345 | € 1,20 | € 6,00 |
350+ | € 1,10 | € 5,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Alkuperämaa
Korea, Republic Of