Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Alkuperämaa
China
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,958
1 kpl (10 kpl/putki) (ilman ALV)
€ 1,188
1 kpl (10 kpl/putki) (Sis ALV:n)
10
€ 0,958
1 kpl (10 kpl/putki) (ilman ALV)
€ 1,188
1 kpl (10 kpl/putki) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
10 - 40 | € 0,958 | € 9,58 |
50 - 90 | € 0,939 | € 9,39 |
100 - 290 | € 0,928 | € 9,28 |
300 - 590 | € 0,916 | € 9,16 |
600+ | € 0,903 | € 9,03 |
Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Alkuperämaa
China