Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDFN56
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
69.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
35.3 nC @ 10 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm
Alkuperämaa
China
Tuotetiedot
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,412
1 kpl (25 kpl/kela) (ilman ALV)
€ 0,511
1 kpl (25 kpl/kela) (Sis ALV:n)
25
€ 0,412
1 kpl (25 kpl/kela) (ilman ALV)
€ 0,511
1 kpl (25 kpl/kela) (Sis ALV:n)
25
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
25 - 100 | € 0,412 | € 10,30 |
125 - 475 | € 0,35 | € 8,75 |
500 - 1225 | € 0,309 | € 7,72 |
1250+ | € 0,285 | € 7,12 |
Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDFN56
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
69.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
35.3 nC @ 10 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm
Alkuperämaa
China
Tuotetiedot
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.