Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Alkuperämaa
China
Tuotetiedot
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,042
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,052
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,042
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,052
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
3000 - 6000 | € 0,042 | € 126,00 |
9000+ | € 0,041 | € 123,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Alkuperämaa
China
Tuotetiedot