Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Alkuperämaa
China
Tuotetiedot
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,04
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,05
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 0,04
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,05
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Alkuperämaa
China
Tuotetiedot