Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Width
4.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Alkuperämaa
Philippines
Tuotetiedot
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,75
kpl (toimitus teipissä) (ilman ALV)
€ 2,196
kpl (toimitus teipissä) (Sis ALV:n)
Standardi
5
€ 1,75
kpl (toimitus teipissä) (ilman ALV)
€ 2,196
kpl (toimitus teipissä) (Sis ALV:n)
Standardi
5
Tekninen dokumentti
Tekniset tiedot
Merkki
NexperiaChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Width
4.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Alkuperämaa
Philippines
Tuotetiedot