Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,429
kpl (toimitus kelassa) (ilman ALV)
€ 0,532
kpl (toimitus kelassa) (Sis ALV:n)
5
€ 0,429
kpl (toimitus kelassa) (ilman ALV)
€ 0,532
kpl (toimitus kelassa) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
5 - 45 | € 0,429 | € 2,14 |
50 - 95 | € 0,386 | € 1,93 |
100 - 245 | € 0,365 | € 1,82 |
250 - 495 | € 0,322 | € 1,61 |
500+ | € 0,301 | € 1,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.