Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,34
€ 0,134 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,68
€ 0,168 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 1,34
€ 0,134 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,68
€ 0,168 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 40 | € 0,134 | € 1,34 |
50 - 90 | € 0,122 | € 1,22 |
100 - 240 | € 0,114 | € 1,14 |
250 - 490 | € 0,108 | € 1,08 |
500+ | € 0,094 | € 0,94 |
Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.