Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
1.1pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,386
kpl (toimitus kelassa) (ilman ALV)
€ 0,479
kpl (toimitus kelassa) (Sis ALV:n)
50
€ 0,386
kpl (toimitus kelassa) (ilman ALV)
€ 0,479
kpl (toimitus kelassa) (Sis ALV:n)
50
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
50 - 200 | € 0,386 | € 19,30 |
250 - 450 | € 0,355 | € 17,75 |
500 - 1200 | € 0,333 | € 16,65 |
1250 - 2450 | € 0,307 | € 15,35 |
2500+ | € 0,282 | € 14,10 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
1.1pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.