Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
37.5 nC @ 10 V
Height
15.87mm
Alkuperämaa
Korea, Republic Of
Tuotetiedot
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 3,05
1 kpl (50 kpl/putki) (ilman ALV)
€ 3,782
1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 3,05
1 kpl (50 kpl/putki) (ilman ALV)
€ 3,782
1 kpl (50 kpl/putki) (Sis ALV:n)
50
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
50 - 200 | € 3,05 | € 152,50 |
250 - 450 | € 2,95 | € 147,50 |
500+ | € 2,90 | € 145,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
37.5 nC @ 10 V
Height
15.87mm
Alkuperämaa
Korea, Republic Of
Tuotetiedot