P-Channel MOSFET, 6.8 A, 30 V, 6-Pin MLP onsemi FDMA530PZ
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
30 V
Series
PowerTrench
Package Type
MLP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2mm
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Minimum Operating Temperature
-55 °C
Height
0.75mm
Tuotetiedot
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Tarkista myöhemmin uudelleen.
€ 0,715
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 0,887
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 0,715
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 0,887
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
| Määrä | Yksikköhinta | Per Pakkaus |
|---|---|---|
| 5 - 20 | € 0,715 | € 3,58 |
| 25 - 95 | € 0,595 | € 2,98 |
| 100 - 245 | € 0,377 | € 1,88 |
| 250 - 495 | € 0,359 | € 1,80 |
| 500+ | € 0,338 | € 1,69 |
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
30 V
Series
PowerTrench
Package Type
MLP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2mm
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Minimum Operating Temperature
-55 °C
Height
0.75mm
Tuotetiedot
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.