Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
211 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.09 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
5.85mm
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Tuotetiedot
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,292
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,362
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,292
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,362
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
211 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.09 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
5.85mm
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Tuotetiedot