Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
67 A
Maximum Drain Source Voltage
120 V
Package Type
PQFN 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
106 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
36 nC @ 6 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Alkuperämaa
Philippines
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 2,45
1 kpl (3000 kpl/kela) (ilman ALV)
€ 3,038
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 2,45
1 kpl (3000 kpl/kela) (ilman ALV)
€ 3,038
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
67 A
Maximum Drain Source Voltage
120 V
Package Type
PQFN 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
106 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
36 nC @ 6 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Alkuperämaa
Philippines