Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Width
6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Tuotetiedot
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,55
1 kpl (3000 kpl/kela) (ilman ALV)
€ 1,922
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 1,55
1 kpl (3000 kpl/kela) (ilman ALV)
€ 1,922
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Width
6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Tuotetiedot