Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.67mm
Length
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
15.21mm
Alkuperämaa
China
€ 2 640,00
€ 3,30 1 kpl (800 kpl/putki) (ilman ALV)
€ 3 313,20
€ 4,142 1 kpl (800 kpl/putki) (Sis ALV:n)
800
€ 2 640,00
€ 3,30 1 kpl (800 kpl/putki) (ilman ALV)
€ 3 313,20
€ 4,142 1 kpl (800 kpl/putki) (Sis ALV:n)
800
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Tarkista myöhemmin uudelleen.
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.67mm
Length
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
15.21mm
Alkuperämaa
China