Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
378 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 5,50
1 kpl (30 kpl/putki) (ilman ALV)
€ 6,82
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 5,50
1 kpl (30 kpl/putki) (ilman ALV)
€ 6,82
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
378 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.