Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
5 A
Package Type
TO-220F
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
20
Pin Count
3
Maximum Operating Temperature
+125 °C
Dimensions
10.36 x 4.9 x 16.07mm
Tuotetiedot
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,40
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,736
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 1,40
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,736
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 90 | € 1,40 | € 14,00 |
100 - 240 | € 1,05 | € 10,50 |
250 - 490 | € 1,05 | € 10,50 |
500 - 990 | € 0,886 | € 8,86 |
1000+ | € 0,73 | € 7,30 |
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
5 A
Package Type
TO-220F
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
20
Pin Count
3
Maximum Operating Temperature
+125 °C
Dimensions
10.36 x 4.9 x 16.07mm
Tuotetiedot
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.