Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
91 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
76 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
17 nC @ 4.5
Height
2.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
Vietnam
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Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
91 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
76 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
17 nC @ 4.5
Height
2.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
Vietnam