Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
65 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
4.83mm
Transistor Material
GaN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.1V
Height
15.75mm
Alkuperämaa
Philippines
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 21,10
kpl (ilman ALV)
€ 26,16
kpl (Sis ALV:n)
1
€ 21,10
kpl (ilman ALV)
€ 26,16
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 1 | € 21,10 |
2 - 4 | € 20,40 |
5 - 9 | € 20,20 |
10 - 49 | € 18,90 |
50+ | € 18,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
65 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
4.83mm
Transistor Material
GaN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.1V
Height
15.75mm
Alkuperämaa
Philippines