Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
CPH
Mounting Type
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Saturation Voltage
0.4 V
Alkuperämaa
China
Tuotetiedot
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,113
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,14
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,113
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,14
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
CPH
Mounting Type
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Saturation Voltage
0.4 V
Alkuperämaa
China
Tuotetiedot
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.