Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
50 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.28 x 10.28 x 4.82mm
Tuotetiedot
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,05
kpl (ilman ALV)
€ 1,30
kpl (Sis ALV:n)
1
€ 1,05
kpl (ilman ALV)
€ 1,30
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 9 | € 1,05 |
10 - 99 | € 0,91 |
100 - 249 | € 0,68 |
250 - 499 | € 0,66 |
500+ | € 0,57 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
50 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.28 x 10.28 x 4.82mm
Tuotetiedot
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.