N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-3PN onsemi FCA47N60F
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
600 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
73 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.2mm
Typical Gate Charge @ Vgs
210 nC @ 10 V
Height
20.1mm
Series
SuperFET
Minimum Operating Temperature
-55 °C
Tuotetiedot
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Tarkista myöhemmin uudelleen.
€ 11,20
1 kpl (30 kpl/putki) (ilman ALV)
€ 13,888
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 11,20
1 kpl (30 kpl/putki) (ilman ALV)
€ 13,888
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
600 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
73 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.2mm
Typical Gate Charge @ Vgs
210 nC @ 10 V
Height
20.1mm
Series
SuperFET
Minimum Operating Temperature
-55 °C
Tuotetiedot
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.