Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
595 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Length
15.8mm
Typical Gate Charge @ Vgs
222 nC @ 10 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
22.74mm
Forward Diode Voltage
1.2V
Alkuperämaa
China
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 20,20
1 kpl (450 kpl/putki) (ilman ALV)
€ 25,048
1 kpl (450 kpl/putki) (Sis ALV:n)
450
€ 20,20
1 kpl (450 kpl/putki) (ilman ALV)
€ 25,048
1 kpl (450 kpl/putki) (Sis ALV:n)
450
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
595 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Length
15.8mm
Typical Gate Charge @ Vgs
222 nC @ 10 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
22.74mm
Forward Diode Voltage
1.2V
Alkuperämaa
China