Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
5.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Alkuperämaa
Philippines
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,663
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,822
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,663
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,822
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
5.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Alkuperämaa
Philippines