Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
24 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 18.9mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Alkuperämaa
Malaysia
Tuotetiedot
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 4,30
kpl (toimitus putkessa) (ilman ALV)
€ 5,33
kpl (toimitus putkessa) (Sis ALV:n)
1
€ 4,30
kpl (toimitus putkessa) (ilman ALV)
€ 5,33
kpl (toimitus putkessa) (Sis ALV:n)
1
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
24 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 18.9mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Alkuperämaa
Malaysia
Tuotetiedot
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.