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Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Alkuperämaa
China
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 2,60
1 kpl (30 kpl/putki) (ilman ALV)
€ 3,224
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 2,60
1 kpl (30 kpl/putki) (ilman ALV)
€ 3,224
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
30 - 30 | € 2,60 | € 78,00 |
60 - 120 | € 2,40 | € 72,00 |
150 - 270 | € 2,25 | € 67,50 |
300+ | € 2,10 | € 63,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Alkuperämaa
China
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.