Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
64 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-264
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
20 x 5 x 26mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 9,50
1 kpl (25 kpl/putki) (ilman ALV)
€ 11,78
1 kpl (25 kpl/putki) (Sis ALV:n)
25
€ 9,50
1 kpl (25 kpl/putki) (ilman ALV)
€ 11,78
1 kpl (25 kpl/putki) (Sis ALV:n)
25
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
25 - 100 | € 9,50 | € 237,50 |
125 - 225 | € 8,00 | € 200,00 |
250+ | € 7,10 | € 177,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
64 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Package Type
TO-264
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
20 x 5 x 26mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.