Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
298 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.67 x 11.33 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 4,20
kpl (toimitus kelassa) (ilman ALV)
€ 5,208
kpl (toimitus kelassa) (Sis ALV:n)
2
€ 4,20
kpl (toimitus kelassa) (ilman ALV)
€ 5,208
kpl (toimitus kelassa) (Sis ALV:n)
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
2 - 6 | € 4,20 | € 8,40 |
8 - 38 | € 3,75 | € 7,50 |
40 - 198 | € 3,35 | € 6,70 |
200 - 398 | € 2,90 | € 5,80 |
400+ | € 2,50 | € 5,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
298 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.67 x 11.33 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Tuotetiedot
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.