Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Tuotetiedot
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,381
kpl (toimitus pussissa) (ilman ALV)
€ 0,478
kpl (toimitus pussissa) (Sis ALV:n)
Tuotantopakkaus (Pussi)
100
€ 0,381
kpl (toimitus pussissa) (ilman ALV)
€ 0,478
kpl (toimitus pussissa) (Sis ALV:n)
Tuotantopakkaus (Pussi)
100
Osta irtotavarana
Määrä | Yksikköhinta | Per Pussi |
---|---|---|
100 - 225 | € 0,381 | € 9,52 |
250 - 475 | € 0,331 | € 8,28 |
500+ | € 0,291 | € 7,28 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Tuotetiedot
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.