Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 6.22 x 2.39mm
Tuotetiedot
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,316
kpl (toimitus kelassa) (ilman ALV)
€ 0,392
kpl (toimitus kelassa) (Sis ALV:n)
10
€ 0,316
kpl (toimitus kelassa) (ilman ALV)
€ 0,392
kpl (toimitus kelassa) (Sis ALV:n)
10
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 6.22 x 2.39mm
Tuotetiedot
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.