Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Maximum Operating Temperature
+150 °C
Height
1.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 51.20
€ 0.256 Each (Supplied on a Reel) (Exc. Vat)
€ 64.26
€ 0.321 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
€ 51.20
€ 0.256 Each (Supplied on a Reel) (Exc. Vat)
€ 64.26
€ 0.321 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
200
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 200 - 480 | € 0.256 | € 5.12 |
| 500 - 980 | € 0.222 | € 4.44 |
| 1000 - 1980 | € 0.195 | € 3.90 |
| 2000+ | € 0.178 | € 3.56 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Maximum Operating Temperature
+150 °C
Height
1.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


