Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Korea, Republic Of
Tuotetiedot
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,51
1 kpl (50 kpl/putki) (ilman ALV)
€ 0,632
1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 0,51
1 kpl (50 kpl/putki) (ilman ALV)
€ 0,632
1 kpl (50 kpl/putki) (Sis ALV:n)
50
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Korea, Republic Of
Tuotetiedot