Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
36 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
4.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
4mm
Number of Elements per Chip
1
Height
1.5mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Philippines
Tuotetiedot
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,276
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,342
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,276
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,342
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
36 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
4.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
4mm
Number of Elements per Chip
1
Height
1.5mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Philippines
Tuotetiedot