Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
11.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
41.7 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.1mm
Typical Gate Charge @ Vgs
11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V
Width
6.1mm
Number of Elements per Chip
1
Height
1.1mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Tuotetiedot
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,854
1 kpl (1500 kpl/kela) (ilman ALV)
€ 1,059
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
€ 0,854
1 kpl (1500 kpl/kela) (ilman ALV)
€ 1,059
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
11.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
41.7 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.1mm
Typical Gate Charge @ Vgs
11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V
Width
6.1mm
Number of Elements per Chip
1
Height
1.1mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Tuotetiedot