Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
5 nC @ 10 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 2,05
1 kpl (3000 kpl/kela) (ilman ALV)
€ 2,542
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 2,05
1 kpl (3000 kpl/kela) (ilman ALV)
€ 2,542
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
5 nC @ 10 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V