Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Tuotetiedot
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,345
1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 0,428
1 kpl (25 kpl/pakkaus) (Sis ALV:n)
25
€ 0,345
1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 0,428
1 kpl (25 kpl/pakkaus) (Sis ALV:n)
25
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
25 - 100 | € 0,345 | € 8,62 |
125 - 475 | € 0,159 | € 3,98 |
500 - 1225 | € 0,15 | € 3,75 |
1250+ | € 0,13 | € 3,25 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Tuotetiedot