Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Maximum Operating Temperature
+175 °C
Length
6.73mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
2.25mm
Series
NVD5C464N
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,867
1 kpl (2500 kpl/kela) (ilman ALV)
€ 1,075
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,867
1 kpl (2500 kpl/kela) (ilman ALV)
€ 1,075
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Maximum Operating Temperature
+175 °C
Length
6.73mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
2.25mm
Series
NVD5C464N
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101