Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
2.38mm
Series
NVD5C684NL
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,828
1 kpl (2500 kpl/kela) (ilman ALV)
€ 1,027
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,828
1 kpl (2500 kpl/kela) (ilman ALV)
€ 1,027
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
2.38mm
Series
NVD5C684NL
Minimum Operating Temperature
-55 °C
Tuotetiedot