Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Length
6.1mm
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.05mm
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,628
1 kpl (1500 kpl/kela) (ilman ALV)
€ 0,779
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
€ 0,628
1 kpl (1500 kpl/kela) (ilman ALV)
€ 0,779
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Length
6.1mm
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.05mm