Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
433 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
630 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
205 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
8.1mm
Typical Gate Charge @ Vgs
99 nC @ 4.5 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Alkuperämaa
Philippines
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 6,70
1 kpl (3000 kpl/kela) (ilman ALV)
€ 8,408
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 6,70
1 kpl (3000 kpl/kela) (ilman ALV)
€ 8,408
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
433 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
630 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
205 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
8.1mm
Typical Gate Charge @ Vgs
99 nC @ 4.5 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Alkuperämaa
Philippines