Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
5.8 @ 10 V nC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.15mm
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,37
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,459
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,37
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,459
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
5.8 @ 10 V nC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.15mm
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V