Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.15mm
Height
0.75mm
Series
NVTFS5C658NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Tuotetiedot
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,55
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,922
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 1,55
1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 1,922
1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 20 | € 1,55 | € 7,75 |
25 - 95 | € 1,50 | € 7,50 |
100 - 245 | € 1,45 | € 7,25 |
250 - 495 | € 1,45 | € 7,25 |
500+ | € 1,40 | € 7,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.15mm
Height
0.75mm
Series
NVTFS5C658NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Tuotetiedot