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Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maximum Operating Temperature
+175 °C
Alkuperämaa
China
Tuotetiedot
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 6,30
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€ 7,812
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€ 6,30
1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 7,812
1 kpl (2 kpl/pakkaus) (Sis ALV:n)
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
2 - 18 | € 6,30 | € 12,60 |
20 - 38 | € 5,30 | € 10,60 |
40 - 198 | € 4,90 | € 9,80 |
200 - 398 | € 4,50 | € 9,00 |
400+ | € 4,05 | € 8,10 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maximum Operating Temperature
+175 °C
Alkuperämaa
China
Tuotetiedot
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.