Tekninen dokumentti
Tekniset tiedot
Merkki
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
TSMT-8
Series
QS8J4
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
84 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Width
2.5mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
13 nC @ 10 V (N Channel)
Forward Diode Voltage
1.2V
Height
0.8mm
Alkuperämaa
Japan
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,442
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,548
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,442
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,548
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 40 | € 0,442 | € 4,42 |
50 - 90 | € 0,397 | € 3,97 |
100 - 240 | € 0,363 | € 3,63 |
250 - 990 | € 0,33 | € 3,30 |
1000+ | € 0,306 | € 3,06 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
TSMT-8
Series
QS8J4
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
84 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Width
2.5mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
13 nC @ 10 V (N Channel)
Forward Diode Voltage
1.2V
Height
0.8mm
Alkuperämaa
Japan