Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.4 x 4.6 x 15.75mm
Maximum Operating Temperature
+150 °C
Alkuperämaa
China
Tuotetiedot
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,40
1 kpl (75 kpl/putki) (ilman ALV)
€ 1,736
1 kpl (75 kpl/putki) (Sis ALV:n)
75
€ 1,40
1 kpl (75 kpl/putki) (ilman ALV)
€ 1,736
1 kpl (75 kpl/putki) (Sis ALV:n)
75
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
75 - 75 | € 1,40 | € 105,00 |
150 - 150 | € 1,05 | € 78,75 |
225 - 450 | € 1,00 | € 75,00 |
525 - 900 | € 0,881 | € 66,08 |
975+ | € 0,73 | € 54,75 |
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.4 x 4.6 x 15.75mm
Maximum Operating Temperature
+150 °C
Alkuperämaa
China
Tuotetiedot
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.